Some of the most important but least understood aspects of plasma processing are the interaction at the surface of the substrate (e.g. silicon wafer) and the walls of the reactor. These elusive processes have been difficult to study on real surfaces while they are exposed to the harsh plasma enviroment. We have begun studies of plasma chemistry on dynamic, reactive surfaces, using a novel spinning substrate method. In this case, the spinning wall is rapidly spun (e.g. 40,000 rpm) to bring the surface from the plasma to an analysis chamber in times of less than 1 millisecond. In the analysis chamber, mass spectrometry is used to observe short-lived species that are desorbing, while Auger electron spectroscopy is used to detect such species before they leave the surface. By varying the rotation frequency, surface reaction kinetics can be determined.


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