High deposition rate, reel-to-reel continuous Metal Organic Chemical Vapor Deposition of thick films of complex materials

      Metal Organic Chemical Vapor Deposition (MOCVD) or Metal Organic Vapor Phase Epitaxy (MOVPE) is a popular technique to deposit high-quality films of complex materials such as oxides and nitrides. In this technique, metal organic precursors in a liquid/solution state are flash vaporized and the vapors are transported in a carrier gas into a reactor where they are injected through a showerhead and deposited on a hot substrate. Tetramethyl heptanedionate (thd) or acetyl acetonate (acac) ligands are commonly used in metal organic precursors. A liquid precursor delivery system has been developed for controlled delivery of high vapor pressure systems.
      The MOCVD technique has been successfully used to deposit oxide superconductor (YBa2Cu3Ox) films as thick as about 4 microns. In such a case, high deposition rates are important so as to minimize the time required to deposit thick films. High deposition rate is achieved using a high-volume vaporizer design that is capable of flash vaporization of large quantities of precursors. Using a reel-to-reel substrate handling system, thick films of complex materials is deposited on flexible substrates. We are synthesizing complex materials, and especially oxides, by MOCVD including high-temperature epitaxial growth by MOVPE on flexible substrates.

Metal Organic Chemical Vapor Deposition process for advanced thin film synthesis

MOCVD - Metal Organic Chemical Vapor Deposition