Please note that the topics that
are striked have been already selected by the listed students
Gate stack engineering refers
to new dielectrics and new gate electrode materials. Discuss the
main issues regarding operation and performance of MOSFETs at deep
submicron dimensions. Show justification for implementation new
gate stack materials.
Advanced process control;
state of the art characterization techniques. Fault
detection.
Advances in fabrication of
Bipolar Integrated Circuits. Can SiGe technology deliver high
frequency ICs that can compete with compound semiconductors
circuits?.
Current and future materials
for interconnect systems (dielectrics and metals). Difficulties of
Cu processing vs. its advantages. Will these advantages exist in
more aggressively scaled down devices?
Trends in DRAMS fabrication;
new materials and designs.
Prospects of growth or decline
in BiCMOS circuits?
Technology differences in
analog and digital ICs (use ITRS)
SOI devices: fully or
partially depleted? Performance and integration
issues.
Fabrication of S/D regions in
deep submicron devices. Contact integrated with junctions.
Intrinsic limitations of materials and degradation of device
performance.
Beyond CMOS: Band-Engineered
Transistors. Discuss this non-traditional MOS device considered in
the ITRS as non-bulk CMOS devices.
Beyond CMOS: Vertical
Transistors. Discuss this non-traditional MOS device considered in
the ITRS as non-bulk CMOS devices.
Beyond CMOS: FINFET. Discuss
this non-traditional MOS device considered in the ITRS as non-bulk
CMOS devices
Beyond CMOS: Double-gate
Transitors. Discuss this non-traditional MOS device considered in
the ITRS as non-bulk CMOS devices.
3D Integration.
Non-Volatile Memory (Flash).
Problem with scaling.
Molecular
Electronic.
Ferroelectric Random Access
Memory (FeRAM). New materials and integration issues.
